Measurements of dislocations in 4H-SiC with rocking curve imaging

TL;DR

This paper employs rocking curve imaging via X-ray topography to analyze dislocation distributions in 4H-SiC, providing insights into crystal quality crucial for enhancing high-power electronic device fabrication.

Contribution

It introduces a novel application of rocking curve imaging to characterize dislocations in 4H-SiC, aiding in understanding defect distributions for better material quality.

Findings

Dislocation maps reveal defect distribution patterns.

Rocking curve parameters correlate with dislocation types.

Insights can guide fabrication improvements.

Abstract

4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.