Estimation Enhancing in Optoelectronic Property: A Novel Approach Using Orbital Interaction Parameters and Tight-Binding

TL;DR

This paper introduces a new method using orbital interaction parameters and Tight-Binding theory to improve the estimation of optoelectronic properties in quantum structures, especially for complex super-lattice and quantum well systems.

Contribution

The paper presents a novel three-phase methodology combining orbital interaction parameters with Tight-Binding theory for more accurate property estimation.

Findings

Enhanced accuracy in predicting bandgap energies

Effective application to super-lattice structures

Promising results in cut-off wavelength estimation

Abstract

This paper advocates for an innovative approach designed for estimating optoelectronic properties of quantum structures utilizing Tight-Binding (TB) theory. Predicated on the comparative analysis between estimated and actual properties, the study strives to validate the efficacy of this proposed technique; focusing notably on the computation of bandgap energy. It is observed that preceding methodologies offered a restricted accuracy when predicting complex structures like super-lattices and quantum wells. To address this gap, we propose a methodology involving three distinct phases using orbital interaction parameters (OIPs) and the TB theory. The research employed Aluminium Arsenide (AlAs) and Gallium Arsenide (GaAs) as the primary bulk materials. Our novel approach introduces a computation framework that first focuses on bulk computation, subsequently expanding to super-lattice structures. The findings of this research demonstrate promising results regarding the accuracy of predicated optoelectronic properties, particularly the cut-off wavelength. This study paves the way for future research, potentially enhancing the precision of the proposed methodology and its application scope within the field of quantum optoelectronics.