High fidelity TiN processing modes for multi-gate Ge-based quantum devices

TL;DR

This paper presents a high-resolution TiN multi-gate fabrication process using hydrogen silsesquioxane resist for quantum dot devices, enabling precise, high-fidelity patterning essential for scalable quantum computing architectures.

Contribution

It introduces a novel TiN gate definition method with hydrogen silsesquioxane resist, achieving 15 nm resolution and demonstrating applicability to multi-gate Ge-based quantum devices.

Findings

Achieved gate dimensions down to 15 nm with high fidelity.

Demonstrated multi-gate architectures for Ge-based quantum devices.

Validated the process for complex, high-density gate arrays.

Abstract

Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to realize larger number of gate-defined qubits, multiples of gates with ultimately high resolution and fidelity is required. Electron beam lithography (EBL) offers flexible and tunable patterning of gate-defined spin-qubit devices for studying important quantum phenomena. While such devices are commonly realized by a positive resist process using metal lift-off, there are several clear limitations related to the resolution and the fidelity of patterning. Herein, we report a systematic study of an alternative TiN multi-gates definition approach based on the highest resolution hydrogen silsesquioxane (HSQ) EBL resist and all associated processing modes. The TiN gate arrays formed show excellent fidelity, dimensions down to 15 nm, various densities, and complexities. The processing modes developed were used to demonstrate applicability of this approach to forming multi-gate architectures for two types of spin-qubit devices prototypic to i) NW/fin-type FETs and ii) planar quantum well-type devices, both utilizing epi-grown Ge device layers on Si, where GeSn or Ge are the host materials for the QDs.