Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

TL;DR

This paper demonstrates room-temperature optically detected magnetic resonance in telecom-range single photon emitters in GaN, advancing quantum technology applications by enabling spin manipulation without cryogenic cooling.

Contribution

It reports the first observation of ODMR at room temperature in GaN telecom single photon emitters, analyzing spin orientation and transition dynamics to aid scalable quantum device development.

Findings

ODMR observed at room temperature in GaN SPEs

Spin quantization axis determined relative to crystal lattice

Insights into optical transition rates affecting ODMR

Abstract

Solid-state defects susceptible of spin manipulation hold great promise for scalable quantum technology. To broaden their utility, operating at room temperature and emitting in the telecom wavelength range are desired, eliminating cryogenic requirements and leveraging existing optical fiber infrastructure for transmitting the quantum information. To that end, we report that telecom single photon emitters (SPEs) in gallium nitride (GaN) exhibit optically detected magnetic resonance (ODMR) at room temperature. The analysis of ODMR as a function of magnetic field orientation enables the determination of the orientation of the spin quantization axis with respect to the GaN crystalline lattice. The optical transitions dynamics are analyzed to gain further insight into the transition rates dominating ODMR. Our findings, coupled with GaN's mature fabrication technology, could facilitate the realization of scalable quantum technology.