Electron transport in quasi-ballistic FETs subjected to a magnetic field

TL;DR

This paper investigates how magnetic fields affect electron transport in short quasi-ballistic FETs, revealing unique current-voltage behaviors and magnetoresistance properties relevant for nanoscale device development.

Contribution

It provides a detailed analysis of electron distributions, current characteristics, and magnetoresistance in quasi-ballistic FETs under magnetic fields, including numerical estimates and potential applications.

Findings

Identification of kink-like current-voltage characteristics.

Enhanced magnetoresistance in higher ballisticity devices.

Numerical estimates of magnetic field effects on electron transport.

Abstract

We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents and voltages in the short FET channels are determined. The basic properties of current-voltage characteristics of quasi-ballistic FETs in magnetic field are analyzed, among these the kink-like characteristics of the near-ballistic device. Peculiarities of magnetoresistance of such FETs are studied for low and high magnetic fields, and different current regimes. For nonlinear current regimes we revealed significantly larger magnetoresistance for the devices with higher ballisticity. Numerical estimates of studied effects are presented. We suggest, that the found results contribute to the physics of short FETs and can be used for developing nanoscale devices for particular applications.