Surface plasmon-mediated photoluminescence boost in graphene-covered CsPbBr$_3$ quantum dots
Youngsin Park, Elham Oleiki, Guanhua Ying, Atanu Jana, Mutibah, Alanazi, Vitaly Osokin, Sangeun Cho, Robert A. Taylorb, Geunsik Lee

TL;DR
This study demonstrates a three-orders-of-magnitude enhancement in photoluminescence of CsPbBr$_3$ quantum dots when covered with graphene, due to interfacial electrostatic effects, defect passivation, and plasmon coupling, advancing optoelectronic device design.
Contribution
It uncovers the mechanisms behind PL enhancement in graphene-covered CsPbBr$_3$ QDs, combining experimental data with DFT calculations and revealing plasmonic effects at the interface.
Findings
PL intensity increased by three orders of magnitude with graphene coverage
Graphene passivates surface defects, reducing nonradiative recombination
Graphene's plasmon mode couples with excitons, enhancing emission
Abstract
The optical properties of graphene (Gr)-covered CsPbBr quantum dots (QDs) were investigated using micro-photoluminescence spectroscopy, revealing a remarkable three-orders-of-magnitude enhancement in photoluminescence (PL) intensity compared to bare CsPbBr QDs. To elucidate the underlying mechanisms, we combined experimental techniques with density functional theory (DFT) calculations. DFT simulations showed that the graphene layer generates interfacial electrostatic potential barriers when in contact with the CsPbBr surface, impeding carrier leakage from perovskite to graphene and enhancing radiative recombination. Additionally, graphene passivates CsPbBr surface defect states, suppressing nonradiative recombination of photo-generated carriers. Our study also revealed that graphene becomes n-doped upon contact with CsPbBr QDs, activating its plasmon mode. This mode…
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Taxonomy
TopicsSemiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices · Perovskite Materials and Applications
