Measurements of proton hardness factors in silicon at energies between 10 MeV and 25 MeV

TL;DR

This study measures the proton hardness factors in silicon detectors at energies between 10 and 25 MeV, revealing discrepancies with theoretical predictions at certain energies, which is crucial for radiation damage assessment in high-energy physics.

Contribution

The paper provides experimental measurements of proton hardness factors in silicon at specific energies, highlighting deviations from theoretical models and improving understanding of radiation effects.

Findings

Hardness factors measured at 10.5, 16.4, and 24.3 MeV.

Agreement with theory at 16.4 MeV, deviations at 10.5 and 24.3 MeV.

Results inform radiation damage modeling for silicon detectors.

Abstract

Silicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species and energy. The fluence is therefore often quoted as the 1 MeV neutron equivalent fluence, with hardness factors being the scaling quantity. The hardness factor can be determined by analysing the change in the leakage current of silicon pad diodes post-irradiation. Using the MC40 cyclotron facility at the University of Birmingham, n-in-p FZ silicon pad diodes were irradiated to several fluence points at three different proton beam energies. The hardness factors acquired were 3.07 $\pm$ 0.37 for 10.5 MeV protons, 2.73 $\pm$ 0.27 for 16.4 MeV protons and 2.19 $\pm$ 0.22 for 24.3 MeV protons. The value for 16.4 MeV protons agrees with the theoretical predictions, whereas the values for 10.5 MeV and 24.3 MeV are lower than predicted by the same calculations.