Low Temperature Deposition of Functional Thin Films on Insulating Substrates: Selective Ion Acceleration using Synchronized Floating Potential HiPIMS

TL;DR

This paper introduces Synchronized Floating Potential HiPIMS, a novel ion acceleration method enabling high-quality thin film deposition on insulating substrates at low temperatures, improving film properties and enabling epitaxial growth.

Contribution

It presents a new synchronized ion acceleration technique for low-temperature deposition of high-quality films on insulators, addressing a key challenge in physical vapor deposition.

Findings

Successful deposition of textured Al0.8Sc0.2N films at 100°C

Enhanced crystallinity and reduced residual stress in films

Epitaxial growth achieved on sapphire substrates

Abstract

Ionized physical vapor deposition techniques, such as high-power impulse magnetron sputtering (HiPIMS) are gaining popularity due to their ability to produce high-quality thin films at low deposition temperatures. In those techniques, ions are commonly accelerated onto the growing film using negative potential applied to the substrate. One key challenge however is, how such potentials can be applied on insulating or electrically floating substrates. In this work, we present a novel approach for low-temperature deposition of high-quality thin films on insulating substrates using Synchronized Floating Potential High-Power Impulse Magnetron Sputtering (SFP-HiPIMS). This technique leverages the negative floating potential, induced on the substrate during the HiPIMS discharge. By synchronizing the ion arrival with the substrate's floating potential, specific ions can be accelerated preferentially, thereby enhancing adatom mobility and improving film quality while mitigating the detrimental effects of Ar+ ion bombardment. Our proof-of-concept study demonstrates the deposition of high-quality, textured Al0.8Sc0.2N thin films on various insulating substrates at low temperatures. We show that synchronizing the Al and Sc ion fluxes with the induced negative floating potential significantly enhances the films' crystallinity, c-axis texture and at the same time reduces residual stress. In addition, it enables epitaxial growth on sapphire at temperatures as low as 100{\deg}C. The results of this study demonstrate that SFP-HiPIMS provides a practical and economical solution for a long-standing challenge in physical vapor deposition, which can be implemented in standard deposition equipment. SFP-HiPIMS therefore paves the way for advanced manufacturing processes in various emerging technologies.