Low-noise parametric microwave amplifier based on self-heated nonlinear impedance with sub-nanosecond thermal response

TL;DR

This paper presents a low-noise, thermally driven parametric microwave amplifier using a SIGIS junction, achieving significant gain and low noise temperature through thermal self-modulation and impedance oscillations.

Contribution

It introduces a novel thermally driven parametric amplifier based on SIGIS junctions with detailed theoretical modeling and experimental validation.

Findings

Gain of 18.6 dB over 125 kHz bandwidth

Minimum noise temperature of 1.4 K

Insight into mixing processes and electron-phonon coupling

Abstract

Low-noise amplifiers are of great importance in the field of quantum technologies. We study a thermally driven parametric amplifier based on a superconductor-insulator-graphene-insulator-superconductor (SIGIS) junction coupled to a superconducting microwave cavity. The strong non-linearity in the temperature dependence of our device leads to thermal self-modulation that produces impedance oscillations at frequencies around twice the angular cavity resonance frequency $\omega_\mathrm{r}$. In particular, reactance modulation of the effective capacitance yields a gain of 18.6 dB over a frequency span of 125 kHz with a minimum noise temperature of $T_\mathrm{N} = 1.4$ K. Our theoretical modelling gives insight into the exact mixing processes, confirmation of the electron-phonon coupling parameter and possible improvements of the studied system.