Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4

TL;DR

This study demonstrates a temperature-dependent nonlinear Hall effect in NbIrTe4 driven by Berry curvature dipole, with insights from first-principles calculations and ARPES revealing the role of spin-orbit split bands.

Contribution

It provides the first systematic analysis linking Berry curvature dipole to the nonlinear Hall effect in NbIrTe4, highlighting the tunability via temperature-induced band occupancy.

Findings

NLHE persists above room temperature

Hall conductivity changes sign at 150 K

Berry curvature dipole is responsible for the effect

Abstract

The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.