Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields

TL;DR

This paper investigates how electric fields can tune topological phases in valley-polarized quantum anomalous Hall systems using a Kane-Mele monolayer model, revealing new controllable topological states for valleytronics applications.

Contribution

It introduces a comprehensive analysis of tunable topological phases in valley-polarized QAH systems with inequivalent exchange fields, highlighting electric field control of valley-polarized states.

Findings

Valley-polarized states achieved via Kane-Mele spin-orbit coupling and inequivalent exchange fields.

Diverse topological states, including valley-polarized QAH effects with Chern numbers ±1, ±2, and valley-contrasting states with C=0.

External electric field enables continuous tuning of topological states.

Abstract

Incorporating valley as a degree of freedom into quantum anomalous Hall systems offers a novel approach to manipulating valleytronics in electronic transport. Using the Kane-Mele monolayer as a concrete model, we comprehensively explore the various topological phases in the presence of inequivalent exchange fields and reveal the roles of the interfacial Rashba effect and external electric field in tuning topological valley-polarized states. We find that valley-polarized states can be realized by introducing Kane-Mele spin-orbit coupling and inequivalent exchange fields. Further introducing Rashba spin-orbit coupling and an electric field into the system can lead to diverse topological states, such as the valley-polarized quantum anomalous Hall effect with $\mathcal{C}=~\pm 1,\pm 2$ and valley-contrasting states with $\mathcal{C}=0$. Remarkably, different valley-polarized topological states can be continuously tuned by varying the strength and direction of the external electric field in a fixed system. Our work demonstrates the tunability of topological states in valley-polarized quantum anomalous Hall systems and provides an ideal platform for applications in electronic transport devices in topological valleytronics.