Displacement field-controlled fractional Chern insulators and charge density waves in a graphene/hBN moir\'e superlattice
Samuel H. Aronson, Tonghang Han, Zhengguang Lu, Yuxuan Yao, Kenji Watanabe, Takashi Taniguchi, Long Ju, and Raymond C. Ashoori

TL;DR
This study demonstrates how displacement fields can control topological phases and charge density waves in a graphene/hBN moiré superlattice, revealing tunable fractional Chern insulators and phase transitions in a highly adaptable system.
Contribution
It introduces a method to manipulate topological and trivial phases in moiré graphene using displacement fields, highlighting the emergence of fractional Chern insulators and charge density waves.
Findings
Observation of integer and fractional Chern insulators at specific filling factors
Persistence of the v=1/3 state down to 0.2 T magnetic field
Mapping of a phase diagram showing field-tuned topological and trivial states
Abstract
Rhombohedral multilayer graphene, with its flat electronic bands and concentrated Berry curvature, is a promising material for the realization of correlated topological phases of matter. When aligned to an adjacent hexagonal boron nitride (hBN) layer, the graphene develops narrow minibands with non-trivial topology. By tuning an externally-applied electric displacement field, the conduction electrons can either be pushed towards or away from the moir\'e superlattice. Motivated by the recent observation of the fractional quantum anomalous Hall effect (FQAHE) in the moir\'e-distant case, we study the opposite moir\'e-proximal case, where the superlattice potential is considerably stronger. We explore the physics within the moir\'e conduction bands through capacitance measurements that allow us to determine the inverse electronic compressibility and extract energy gaps of incompressible…
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