Hall Transport in Organic Semiconductors

TL;DR

This paper develops a universal theoretical framework to analyze quasiparticle Hall effects and charge transport in organic semiconductors, combining simulations with experimental comparisons to understand classical and quantum Hall phenomena.

Contribution

It introduces a comprehensive theory linking band structure, electron transport, and vibrational disorder in organic semiconductors, enabling predictions of Hall effects and quantum oscillations.

Findings

Intrinsic Hall conductivity can be calculated from band structure.

Vibrational disorder influences the non-ideality of the Hall effect.

Conditions for observing quantum Hall effects in rubrene are identified.

Abstract

We establish a universal theory to understand quasiparticle Hall effects and transverse charge-carrier transport in organic semiconductors. The simulations are applied to organic crystals inspired by rubrene and cover multiple transport regimes. This includes calculations of the intrinsic Hall conductivity in pristine crystals, which are connected with a simple description of semi-classical electron transport that involves the concept of closed electronic orbits in the band structure, which can be easily calculated in density functional theory. Furthermore, this framework is employed to simulate temperature-dependent longitudinal and transverse mobilities in rubrene. These simulations are compared to experimental findings, providing insights into these results by characterizing the non-ideality of the Hall effect due to the influence of vibrational disorder. We finally investigate the conditions for the observation of Shubnikov-de Haas oscillations in the longitudinal resistivity and quantized Hall plateaus in the transverse resistivity. A clear picture why this is not observed in rubrene is developed. These insights into classical and quantum Hall effects and their intermediates in organic semiconductors establish a blueprint for future explorations in similar systems.