Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals
Zach D. Merino, Gyorgy Jaics, Andrew W. M. Jordan, Arjun Shetty,, Penghui Yin, Man C. Tam, Xinning Wang, Zbig. R. Wasilewski, Pavle V., Radovanovic, Jonathan Baugh

TL;DR
This paper demonstrates that applying plasmonic WO3-x/CsWO3-x nanocrystals to MSM photodetectors significantly enhances their near-infrared responsivity, offering a scalable and cost-effective approach for improved NIR photodetection.
Contribution
It introduces a novel, scalable method of using tailored semiconductor nanocrystals to enhance MSM photodetectors' performance in the NIR range.
Findings
Responsivity increased by up to 2.5 times with nanocrystal application.
Developed a rapid synthesis and testing protocol for WO3-x and Cs_yWO3-x nanocrystals.
Demonstrated potential for cost-effective, scalable NIR photodetector enhancement.
Abstract
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation to improve NIR photodetection, aiming to surpass the performance of established III-V semiconductor p-i-n (PIN) junction technology. These platforms include in situ-grown inorganic nanocrystals and nanowire arrays, as well as hybrid organic-inorganic materials such as graphene-perovskite heterostructures. However, challenges remain in nanocrystal and nanowire growth, large-area fabrication of high-quality 2D materials, and the fabrication of devices for practical applications. Here, we explore the potential for tailored semiconductor nanocrystals…
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Taxonomy
TopicsGa2O3 and related materials · Gas Sensing Nanomaterials and Sensors · GaN-based semiconductor devices and materials
