Quantum Transport Straintronics and Mechanical Aharonov-Bohm Effect in Quasi-metallic SWCNTs
L. Huang, G. Wei, and A. R. Champagne

TL;DR
This paper explores how mechanical strain can control quantum transport in quasi-metallic SWCNTs, revealing a tunable band gap, conductance suppression, and a mechanical Aharonov-Bohm effect, advancing quantum device engineering.
Contribution
It introduces a model demonstrating strain-controlled quantum interference and phase shifts in SWCNT transistors, highlighting the mechanical Aharonov-Bohm effect in these systems.
Findings
Charge carrier propagation angle is fully tunable with strain.
Conductance can be completely suppressed at a specific angle.
Strain generates a tunable band gap up to 400 meV.
Abstract
Single-wall carbon nanotubes (SWCNTs) are effectively narrow ribbons of 2D materials with atomically precise edges. They are ideal systems to harness quantum transport straintronics (QTS), i.e. using mechanical strain to control quantum transport. Their large subband energy spacing ( 0.8 eV) leads to transistors with a single quantum transport channel. We adapt an applied model to study QTS in uniaxially-strained quasi-metallic-SWCNT transistors. The device parameters are based on an existing experimental platform, with channel lengths of 50 nm, diameters 1.5 nm, and strains up to 7 . We demonstrate that the charge carrier's propagation angle is fully tunable with . When reaches 90, the conductance is completely suppressed. A strain-generated band gap can be tuned up to…
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Taxonomy
TopicsSemiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Metal and Thin Film Mechanics
