Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO$_3$

TL;DR

This review discusses recent advances in the synthesis, properties, and device applications of epitaxial La:BaSnO$_3$ films, highlighting improvements in electron mobility, defect reduction, and potential for transparent electronics.

Contribution

It provides a comprehensive overview of the current state of La:BaSnO$_3$ film growth, characterization, and device integration, emphasizing defect engineering and electronic properties.

Findings

High electron mobility achieved at room temperature.

Reduced defect densities in epitaxial La:BaSnO$_3$ films.

Progress in La:BaSnO$_3$-based transistors and heterostructures.

Abstract

This paper reviews recent developments in materials science and device physics of high-quality epitaxial films of the transparent perovskite La-doped barium stannate, La:BaSnO$_3$. It presents current efforts in the synthesis science of epitaxial La:BaSnO$_3$ films for achieving reduced defect densities and high electron mobility at room temperature. We discuss the scattering mechanisms and the route towards engineering defect-free epitaxial La:BaSnO$_3$ heterostructures. By combining chemical surface characterization and electronic transport studies, a special emphasis is laid on the proper correlation between the transport properties and the electronic band structure of La:BaSnO$_3$ films and heterostructures. For application purposes, interesting optical properties of La:BaSnO$_3$ films are discussed. Finally, for their potential application in oxide electronics, an overview of current progress in the fabrication of La:BaSnO$_3$-based thin-film field-effect transistors is presented together with recent progress in the the fundamental realization of two-dimensional electron gases with high electron mobility in La:BaSnO$_3$-based heterostructures. Future experimental studies to reveal the potential deployment of La:BaSnO$_3$ films in optoelectronic and transparent electronics are also discussed.