Magnetophotogalvanic Effects Driven by Terahertz Radiation in CdHgTe Crystals with Kane Fermions
M. D. Moldavskaya, L. E. Golub, V. V. Bel'kov, S. N. Danilov, D. A., Kozlov, J. Wunderlich, D. Weiss, N. N. Mikhailov, S. A. Dvoretsky, S. S., Krishtopenko, B. Benhamou-Bui, F. Teppe, and S. D. Ganichev

TL;DR
This paper reports the observation and analysis of terahertz-induced magneto-photogalvanic effects in CdHgTe crystals with Kane fermions, revealing resonant and nonresonant mechanisms linked to band structure and temperature.
Contribution
It provides the first comprehensive study of MPGE in Kane fermion hosting CdHgTe, including experimental detection, resonance analysis, and theoretical modeling of underlying spin-dependent mechanisms.
Findings
Resonant MPGE observed at specific magnetic fields due to cyclotron resonance and interband transitions.
Band structure calculations match the positions of all observed resonances.
Nonresonant MPGE persists up to room temperature and exhibits nonmonotonic magnetic field dependence.
Abstract
We report on the observation and comprehensive study of the terahertz radiation induced magneto-photogalvanic effect (MPGE) in bulk CdHgTe crystals hosting Kane fermions. The MPGE has been detected in CdHgTe films with Cd contents and subjected to an in-plane magnetic field. At liquid helium temperature we observed multiple resonances in MPGE current upon variation of magnetic field. In the with noninverted band structure, the resonances are caused by cyclotron resonance (CR) and photoionization of an impurity level. In the films with an inverted band structure, they originate from the CR and interband optical transitions. Band structure calculated by the Kane model perfectly describes positions of all resonances. In particularly, the resonant MPGE caused by interband transitions excited by THz radiation is caused by the gapless…
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Taxonomy
TopicsTerahertz technology and applications · Advanced Semiconductor Detectors and Materials · Topological Materials and Phenomena
