Transient current responses of organic electrochemical transistors: Evaluating ion diffusion, chemical capacitance, and series elements

TL;DR

This paper presents a comprehensive physical-electrochemical model for organic electrochemical transistors, analyzing ion diffusion, chemical capacitance, and series elements to understand device switching times and responses.

Contribution

It introduces a new model incorporating ion diffusion, electron transport, and external elements, providing insights into transient responses and device behavior.

Findings

Identifies two key time constants governing device response.

Highlights the importance of chemical capacitance in conductivity modulation.

Classifies different drain current response types relevant for neuromorphic applications.

Abstract

For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we describe a physical-electrochemical model of the transient response to a step of the gate voltage. The model incorporates (1) ion diffusion inside the channel that governs the electronic conductivity, (2) horizontal electron transport, and (3) the external elements (capacitance, ionic resistance) of the ion dynamics in the electrolyte. We find a general expression of two different time constants that determine the vertical insertion process in terms of the kinetic parameters, in addition to the electronic transit time. We highlight the central role of the chemical capacitance in determining the modulation of the lateral conductivity. The different types of response of the drain current are classified, and we discuss the significance for synaptic operation in neuromorphic circuits. The model is confirmed by detailed simulations that enable to visualize the different ions distributions and dynamics.