Rapid quench annealing of Er implanted Si for quantum networking applications

TL;DR

This study demonstrates that rapid quench annealing of Er-implanted silicon can selectively promote the formation of a specific Er centre, enhancing its suitability for quantum networking by reducing undesirable centres.

Contribution

It introduces a high quench rate annealing process that favors the formation of a single, optically active Er centre in silicon, improving quantum network device prospects.

Findings

High quench rate annealing shifts dominant Er centres from Er2O3 clusters to Er-C centres.

Er centres exhibit different defect states and decay rates, affecting optical properties.

The process enables more uniform and desirable Er centre formation for quantum applications.

Abstract

Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previously identified cubic centre (Er-C) has C2v or lower symmetry. Using crystal field analysis of Er-C and other Er centres, and by comparison with extended X-ray absorption fine structure (EXAFS) measurements, we show that Er centres can be arranged in a sequence, ranging from entirely Si coordinated, through mixed Si and oxygen (O) coordination, to entirely O coordinated. G-factors calculated from our crystal field fitting closely match those determined by Zeeman splitting and electron paramagnetic resonance (EPR) measurements. We co-implanted Si with Er and O (each to a concentration of 1019 cm-3). By increasing the quenching rate of the subsequent thermal anneal from ~100 {\deg}C/s to ~1000 {\deg}C/s, we change the dominant optically active centre, formed from Er2O3 clusters to the less energetically favourable Er-C centre with mixed Si and O coordination. Temperature dependent photoluminescence (PL) shows that Er2O3 clusters and Er-C centres have an O-related defect state at ~200 and 90 meV above the 4I13/2 Er manifold, respectively. PL lifetime measurements show that the Er2O3 clusters and Er-C centres fall into two or three classes, characterised by different non-radiative PL decay rates. Our high quench rate annealing process could facilitate the formation of a single, optically active Er centre, which is preferable for quantum networking applications of Er:Si.