Atomic Engineering of Triangular Nanopores in Monolayer hBN: A Decoupled Seeding and Growth Approach
Dana O. Byrne, Frances I. Allen

TL;DR
This paper presents a novel decoupled seeding and growth method for fabricating precise, high-density triangular nanopores in monolayer hBN, combining ion and electron irradiation with thermal annealing for enhanced control and scalability.
Contribution
The study introduces a new decoupled approach for nanopore fabrication that improves size control, density, and scalability in 2D materials, particularly monolayer hBN.
Findings
Controlled nanopore size and density via irradiation doses
Real-time imaging of nanopore formation process
Thermal annealing enhances pore quality and removes contaminants
Abstract
Nanopores in 2D materials are of significant interest in advanced membrane technologies aimed at the sensing and separation of ions and molecules. These applications necessitate 2D nanopores that are precise in size and shape, and abundant in number. However, conventional fabrication techniques often struggle to achieve both high precision and throughput. In this study, we introduce a decoupled seeding and growth approach designed to overcome this limitation. The method allows the controlled fabrication of ensembles of nanopores with narrow size distribution and is demonstrated for free-standing monolayer hexagonal boron nitride. Using light ion showering, we first create vacancy defect seeds. These seeds are then expanded into triangular nanopores through element-specific preferential atom removal under broad-beam electron irradiation in a transmission electron microscope. Nanopore…
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Taxonomy
TopicsGraphene research and applications · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
