Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

TL;DR

This paper reports the fabrication of a novel lateral p-n junction LED on an n-type GaAs/AlGaAs heterostructure, demonstrating controlled electroluminescence suitable for quantum device integration.

Contribution

It introduces a new fabrication method for lateral p-n junctions on high-mobility heterostructures with compatible lithography for quantum device integration.

Findings

Controlled electroluminescence from both junctions.

Emission peak around 812 nm with ~8 nm width.

Electroluminescence originates from GaAs quantum well.

Abstract

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of ~8 nm is observed around 812 nm. The electroluminescence seen from both junctions is considered to originate from the GaAs quantum well layer in the device. The lithographic techniques that we have developed are compatible for further integration of gated quantum devices such as single-electron pumps to build on-demand single-photon sources.