Sub-terahertz field emission transistors with selfpackaged microcavities

TL;DR

This paper introduces a novel vertical terahertz field emission transistor with a self-packaged microcavity, enhancing frequency performance and stability by mitigating interference with surrounding circuits, achieving sub-terahertz cutoff frequency.

Contribution

It presents a new design utilizing a high-angle oblique deposition method to form a self-packaged microcavity in terahertz FETs, improving their performance.

Findings

Effective microcavity mitigates circuit interference

Achieves sub-terahertz cutoff frequency

Enhances device stability and frequency performance

Abstract

This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged microcavity can effectively mitigate the potential impact of conventional field emission transistors on surrounding solid-state circuits, thereby improving the frequency performance and stability of the device. The proposed design exhibits a cutoff frequency at the sub-terahertz level.