Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

TL;DR

This paper demonstrates that inserting carbide interlayers like B4C and SiC significantly reduces thermal boundary resistance at diamond-AlGaN interfaces, improving thermal management in semiconductor devices.

Contribution

It introduces a novel hybrid measurement technique and shows that carbide interlayers can achieve record-low thermal boundary resistance in diamond/AlGaN interfaces.

Findings

Record-low TBR of 3.4-3.7 m^2-K/GW with carbide interlayers

Interlayer thicknesses of 1.7-2.5 nm with amorphous structure

Hybrid thermoreflectance technique improves TBR measurement accuracy

Abstract

This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface with a high thermal boundary resistance (TBR) of 20.6 m^2-K/GW. We employed sputtered carbide interlayers (e.g., $B_4C$, $SiC$, $B_4C/SiC$) to reduce thermal boundary resistance in diamond/AlGaN interfaces. The carbide interlayers resulted in record-low thermal boundary resistance values of 3.4 and 3.7 m^2-K/GW for Al$_{0.65}$Ga$_{0.35}$N samples with $B_4C$ and $SiC$ interlayers, respectively. STEM imaging of the interface reveals interlayer thicknesses between 1.7-2.5 nm, with an amorphous structure. Additionally, Fast-Fourier Transform (FFT) characterization of sections of the STEM images displayed sharp crystalline fringes in the AlGaN layer, confirming it was properly protected from damage from hydrogen plasma during the diamond growth. In order to accurately measure the thermal boundary resistance we develop a hybrid technique, combining time-domain thermoreflectance and steady-state thermoreflectance fitting, offering superior sensitivity to buried thermal resistances. Our findings underscore the efficacy of interlayer engineering in enhancing thermal transport and demonstrate the importance of innovative measurement techniques in accurately characterizing complex thermal interfaces. This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.