Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

TL;DR

This paper presents a novel low-energy, fast-switching, forming-free memristor based on HfO$_x$S$_y$/HfS$_2$ heterostructures, demonstrating multi-state memory, stability at high temperatures, and independence from environmental conditions.

Contribution

The study introduces a new 2D semiconductor-oxide heterostructure memristor with low energy consumption, multi-state capability, and forming-free operation, advancing resistive memory technology.

Findings

Achieved stable, non-volatile resistance states with R$_{ON}$/ R$_{OFF}$ of 102.

Demonstrated 80ns write/erase operations with <20pJ energy per cycle.

Maintained resistance states at 150°C over 10$^4$s, indicating long-term stability.

Abstract

We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide heterostructures are achieved by low temperature ($<300^{o}$C) thermal oxidation of HfS$_2$ in dry conditions, carefully controlling process parameters. The resulting HfO$_x$S$_y$/HfS$_2$ heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between non-volatile states is demonstrated by applying voltage pulses and measuring the current response in time. We show non-volatile memory operation with an R$_{ON}$/ R$_{OFF}$ of 102, programmable by 80ns WRITE and ERASE operations. Multiple stable resistance states are achieved by modulating pulse width and amplitude, down to 60ns, $<$ 20pJ operation. This demonstrates the capability of these devices for low - energy, fast-switching and multi-state programming. Resistance states were retained without fail at 150$^o$C over 10$^4$s, showcasing the potential of these devices for long retention times and resilience to ageing. Low-energy resistive switching measurements were repeated in vacuum (8.6 mbar) showing unchanged characteristics and no dependence of the device on surrounding oxygen or water vapour. Using a technology computer-aided design (TCAD) tool, we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfO$_x$ - based devices.