Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS

TL;DR

This paper demonstrates the first symmetric sub-5-nm NMOS and PMOS oxide FETs using bilayer TeO2, highlighting their potential for next-generation CMOS technology through first-principles simulations.

Contribution

It introduces the first ultra-short gate length bilayer TeO2 FETs with symmetric NMOS and PMOS capabilities, advancing oxide semiconductor applications.

Findings

Both n-type and p-type BL TeO2 FETs meet ITRS high-performance criteria.

First demonstration of symmetric NMOS and PMOS in sub-5-nm oxide FETs.

X-direction n-type FETs satisfy HP and LP requirements at 3 nm Lg.

Abstract

Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultra-short gate length (Lg) p-type transistors has restricted their application in future complementary metal-oxide-semiconductor (CMOS) integration. Inspired by the successfully grown high-hole mobility bilayer (BL) beta tellurium dioxide (\b{eta}-TeO2), we investigate the performance of sub-5-nm-Lg BL \b{eta}-TeO2 field-effect transistors (FETs) by utilizing first-principles quantum transport simulation. The distinctive anisotropy of BL \b{eta}-TeO2 yields different transport properties. In the y-direction, both the sub-5-nm-Lg n-type and p-type BL \b{eta}-TeO2 FETs can fulfill the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, which are superior to the reported oxide FETs (only n-type). Remarkably, we for the first time demonstrate the existence of the NMOS and PMOS symmetry in sub-5-nm-Lg oxide semiconductor FETs. As to the x-direction, the n-type BL \b{eta}-TeO2 FETs satisfy both the ITRS HP and low-power (LP) requirements with Lg down to 3 nm. Consequently, our work shed light on the tremendous prospects of BL \b{eta}-TeO2 for CMOS application.