Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

TL;DR

This paper demonstrates the first hybrid external cavity diode lasers using aluminum nitride, achieving tunable visible and near-infrared lasers with notable spectral and power characteristics.

Contribution

It introduces the first hybrid AlN-based external cavity diode lasers for visible and near-infrared wavelengths, showcasing their spectral and power performance.

Findings

Near-infrared laser with 1 mW on-chip power and 6 nm spectral coverage

Red laser with 15 dB side mode suppression ratio

NIR laser linewidth of 720±80 kHz

Abstract

We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a 650 nm diode. The NIR laser has $\approx$1 mW on chip power, 6 nm of spectral coverage, instantaneous linewidth of 720$\pm$80 kHz, and 12 dB side mode suppression ratio (SMSR). The red laser has 15 dB SMSR.