Electronic Structure and Kohn-Luttinger Superconductivity of Heavily-Doped Single-Layer Graphene
Saul Herrera, Guillermo Parra-Martinez, Philipp Rosenzweig, Bharti, Matta, Craig M. Polley, Kathrin Kuster, Ulrich Starke, Francisco Guinea, Jose, Angel Silva-Guillen, Gerardo G. Naumis, Pierre A. Pantaleon

TL;DR
This paper predicts the possibility of topological d+id superconductivity in heavily-doped single-layer graphene, with a critical temperature up to 600 mK, using a Kohn-Luttinger mechanism and considering various dopants.
Contribution
It introduces a theoretical framework predicting topological superconductivity in doped graphene, highlighting the effects of different dopants on superconducting states.
Findings
Robust d+id topological SC predicted in Tb-doped graphene.
Critical temperature up to 600 mK for the SC.
Dopants altering lattice symmetry suppress d-wave SC.
Abstract
The existence of superconductivity (SC) in graphene appears to be established in both twisted and non-twisted multilayers. However, whether their building block, single-layer graphene (SLG), can also host SC remains an open question. Earlier theoretical works predicted that SLG could become a chiral d-wave superconductor driven by electronic interactions when doped to its van Hove singularity, but questions such as whether the d-wave SC survives the strong band renormalizations seen in experiments, its robustness against the source of doping, or if it will occur at any reasonable critical temperature (Tc) have remained difficult to answer, in part due to uncertainties in model parameters. In this study, we adopt a random-phase approximation framework based on a Kohn-Luttinger-like mechanism to investigate SC in heavily-doped SLG. We predict that robust d+id topological SC could arise in…
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Molecular Junctions and Nanostructures
