Nanocomposites of ferrocenyl-modified gold clusters and semiconducting polymers that integrate field-effect transistor and flash memory in a single neuromorphic device

TL;DR

This paper presents a novel neuromorphic device integrating memristor and transistor functions using nanocomposite films of semiconducting polymers and ferrocenyl-modified gold nanoclusters, enabling simplified data storage and processing.

Contribution

It introduces a new nanocomposite material that combines resistive memory and FET functionalities in a single device for neuromorphic applications.

Findings

Achieved integrated memristor and transistor functions in a single device.

Optimized nanocluster concentration for maximum 1/0 memory effect.

Demonstrated potential for circuit simplification in neuromorphic systems.

Abstract

We demonstrate that electroactive thin films incorporating semiconducting polymers and deterministic functionalized gold nanoclusters (ncAu25) lead to integration of the functions of resistive memory device and field-effect transistor (FETs) within a single component (mem-transistor) in a neuromorphic system. Memristor functions originate from ferrocenyl-modified gold nanoclusters (ncAu25-Fc) embedded in polymethyl-methacrylate (PMMA) and devices optimized for maximum 1/0 'flash' memory effect are found to contain 15 wt% ncAu25-Fc. Integrated memristor and neuromorphic functions are obtained by replacing PMMA with poly(3-hexylthiophene) (P3HT) in the active layer, from which transistor effects are derived. Based on the energy band diagrams of ncAu25, PMMA and P3HT, percolation theory is used to explain the memristor 1/0 on/off ratio as a function of ncAu25-Fc concentration. The use of ncAu25-Fc with charge-tunable, ferrocene-modified, ligands is critical toward better cluster-polymer interfaces. Our work shows that nanostructures of polymers and metalorganic frameworks bear strong potential towards neuromorphic devices and the circuital simplification of data storage technology.