Understanding the transport behaviour of PbSe: A combined experimental and computational study
Isha Sihmar, Abhishek Pandey, Vinod Kumar Solet, Neeru Chaudhary,, Navdeep Goyal, Sudhir K. Pandey

TL;DR
This study combines experimental measurements and computational modeling to analyze the thermoelectric properties of PbSe, revealing its band structure, transport behavior, and potential for thermoelectric applications.
Contribution
It provides a comprehensive understanding of PbSe's thermoelectric behavior through combined experimental and DFT computational analysis, highlighting new insights into its transport properties.
Findings
PbSe is a direct band gap semiconductor with a band gap of 0.16-0.27 eV.
The Seebeck coefficient increases with temperature, reaching 266 μV/K at 500 K.
Maximum power factor observed is 4.3×10^{-5} W/mK^2 at 500 K.
Abstract
Lead chalcogenides are the promising thermoelectric (TE) materials having narrow band gap. The present work investigates the TE behaviour of PbSe in the temperature range 300-500 K. The transport properties of the sample have been studied using the Abinit and BoltzTrap code. The experimentally observed value of \textit{S} at 300 and 500 K is found to be 198 and 266 V K, respectively. The rate of increase in \emph{S} from 300 to 460 (460 to 500) K is found to be 0.4 (0.09). The temperature dependent electrical conductivity \textit{()} shows the increasing trend, with values of 0.35 10 and 0.58 10 m at 300 and 500 K, respectively. Further, the value of thermal conductivity \textit{()} at 300 (500) K is found to be 0.74 (1.07) W m K. The value of \textit{} is…
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Taxonomy
TopicsQuantum Dots Synthesis And Properties · Spectroscopy and Quantum Chemical Studies · Chalcogenide Semiconductor Thin Films
