Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices

TL;DR

This study shows that controlling the type of electrical stimulation in amorphous complex oxide memristors can prevent nanoscale cation segregation, enhancing device reliability and cycle consistency.

Contribution

It reveals that switching from voltage to current stimulation reduces structural changes and cation segregation in amorphous oxide memristors, improving their reliability.

Findings

Current stimulation prevents nanoscale cation segregation.

Electrical stimulation type affects device reliability.

Switching mode influences structural stability.

Abstract

Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observed that switching the electrical stimulation from voltage to current significantly prevents structural changes and cation segregation at the nanoscale, improving also the device cycle-to-cycle variability. These findings could contribute to the design of more reliable oxide-based memristors and underscore the crucial effect that has the type of electrical stimulation applied to the devices on their integrity and reliability.