Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions

TL;DR

This paper theoretically investigates a van der Waals antiferromagnetic-multiferroic tunnel junction, revealing giant tunneling magnetoresistance and electroresistance effects with multiple resistance states, promising for high-speed spintronic memory applications.

Contribution

It introduces a novel vdW AMFTJ design based on first-principles calculations, demonstrating large resistance changes and multiple states controlled by magnetization and ferroelectric polarization.

Findings

Maximum tunneling magnetoresistance of 3.79×10^4% in equilibrium.

Electroresistance reaching 2.41×10^5% under bias.

Presence of perfect spin filtering effect.

Abstract

Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the electronic transport properties of antiferromagnetic-multiferroic tunnel junction (AMFTJ) devices remains largely unexplored. Here, we design an antiferromagnet/ferroelectric barrier/antiferromagnet van der Waals heterojunction, renamed vdW AMFTJ, using a bilayer MnBi$_2$Te$_4$/In$_2$Se$_3$/bilayer MnBi$_2$Te$_4$ (MBT-2L/IS/MBT-2L) as the prototype. Based on first-principles calculations using the nonequilibrium Green's function method combined with density functional theory, we theoretically investigate the spin-resolved electronic transport properties of this AMFTJ. By manipulating the various possible magnetization directions of the multilayer antiferromagnetic MnBi$_2$Te$_4$ and the ferroelectric polarization direction of the In$_2$Se$_3$ within the junction, sixteen distinct non-volatile resistance states can be revealed and manipulated by applying external biaxial strain and bias voltage. We predict maximum tunneling magnetoresistance (electroresistance) values of $3.79\times10^{4}$\% ($2.41\times10^{5}$\%) in the equilibrium state, which can increase up to $5.01\times10^{5}$\% ($4.97\times10^{5}$\%) under external bias voltage. Furthermore, the perfect spin filtering effect is also present in our AMFTJ. Our results highlight the tremendous potential of the MBT-2L/IS/MBT-2L vdW AMFTJ in non-volatile memory, expanding the application avenues for antiferromagnetic spintronic devices.