Multiple sliding ferroelectricity of rhombohedral-stacked InSe for reconfigurable photovoltaics and imaging applications
Qingrong Liang, Guozhong Zheng, Liu Yang, Shoujun Zheng

TL;DR
This paper demonstrates multiple sliding ferroelectric states in rhombohedral-stacked InSe, enabling tunable photovoltaic and imaging functionalities with high responsivity and fast response times.
Contribution
It reports the first observation of multiple sliding ferroelectric states in rhombohedral InSe and explores their application in tunable photovoltaics and imaging devices.
Findings
Multiple ferroelectric states observed in rhombohedral InSe.
Achieved a photovoltaic current density of ~15 mA/cm2.
Device exhibits high photoresponsivity (~255 A/W) and fast response.
Abstract
Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity due to ultra-thin thickness, high switching speed and low fatigue. However, 2D materials with intrinsic sliding ferroelectricity are still rare, with the exception of rhombohedral-stacked MoS2, which limits sliding ferroelectricity for practical applications such as high-speed storage, photovoltaic, and neuromorphic computing. Here, we reported the observation of sliding ferroelectricity with multiple states in undoped rhombohedral-stacked InSe ({\gamma}-InSe) via dual-frequency resonance tracking piezoresponse force microscopy, scanning Kelvin probe microscopy and conductive atomic force microscopy. The tunable bulk photovoltaic effect via the…
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Taxonomy
TopicsSolid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
