Atomic Structure of Self-Buffered BaZr(S,Se)$_3$ Epitaxial Thin Film Interfaces

TL;DR

This study reveals the atomic structure and growth mechanism of BaZr(S,Se)$_3$ epitaxial thin films on LaAlO$_3$, highlighting a self-assembled buffer layer that facilitates lattice mismatch accommodation and enables high-quality film growth.

Contribution

It demonstrates the formation of a self-assembled, rock-salt-like buffer layer that enables epitaxial growth of chalcogenide perovskite films with significant lattice mismatch.

Findings

Self-assembled buffer layer with rock-salt-like structure identified.

Epitaxial films achieved despite 40% lattice mismatch.

Transition from buffer to perovskite structure observed.

Abstract

Understanding and controlling the growth of chalcogenide perovskite thin films through interface design is important for tailoring film properties. Here, the film and interface structure of BaZr(S,Se)$_3$ thin films grown on LaAlO$_3$ by molecular beam epitaxy and post-growth anion exchange is resolved using aberration-corrected scanning transmission electron microscopy. Epitaxial films are achieved from self-assembly of an interface ``buffer'' layer, which accommodates the large film/substrate lattice mismatch of nearly 40\% for the alloy film studied here. The self-assembled buffer layer, occurring for both the as-grown sulfide and post-selenization alloy films, is shown to have rock-salt-like atomic stacking akin to a Ruddlesden-Popper phase. Above this buffer, the film quickly transitions to the perovskite structure. Overall, these results provide insights into oxide-chalcogenide heteroepitaxial film growth, illustrating a process that yields relaxed, crystalline, epitaxial chalcogenide perovskite films that support ongoing studies of optoelectronic and device properties.