Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication
Manyang Li, Jianan Duan, Zhiyong Jin, Shujie Pan, Wenkang Zhan,, Jinpeng Chen, Jinling Yu, Xiaotian Cheng, Zhibo Ni, Chaoyuan Jin, Tien Khee, Ng, Jinxia Kong, Xiaochuan Xu, Yong Yao, Bo Xu, Siming Chen, Zhanguo Wang,, Chao Zhao

TL;DR
This study demonstrates that InAs/GaAs quantum dot lasers exhibit enhanced radiation hardness, stability, and robustness, making them highly suitable for space communication where radiation resistance is critical.
Contribution
The paper provides comprehensive radiation testing results showing InAs/GaAs QD lasers outperform quantum well lasers in space-like conditions, highlighting their potential for space communication.
Findings
InAs/GaAs QDs with >50% filling factor show greater radiation hardness.
QD lasers maintain low linewidth enhancement factor under proton irradiation.
Lasers exhibit high stability and robustness against optical feedback.
Abstract
Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conducted radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results revealed that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs showed superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences…
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices
