In Situ Growth of Copper Channels within CuCl and PVDF Composite for Durable WORM Device Formation

TL;DR

This paper presents a novel in situ growth method for copper channels within a CuCl-PVDF composite to create durable WORM memory devices with stable resistive switching properties.

Contribution

It introduces a new fabrication approach for in-situ copper channel formation in polymer composites for reliable WORM memory applications.

Findings

Stable memory retention demonstrated over extended periods.

In-situ copper channels enable resistive switching behavior.

Potential for use in optical and digital storage devices.

Abstract

This study details the creation of a Write Once-Read Many (WORM) memory device utilizing cuprous chloride (CuCl) and poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) polymers. Employing an in-plane configuration, a deliberate 1:10 ratio of CuCl to PVDF-HFP has been selected. This ratio aims to establish an in-situ copper channel within the device. The electrical response exhibits consistent memory retention over an extended duration. The WORM characteristics are attributed to the development of multiple conducting filaments or a highly conductive percolative path created by Cu ions within the polymer matrix. The UV-Vis study also reinforces the obtained results. Additionally, the memristor undergoes specific poling and cooling conditions. The fabrication approach employed in this research yields a distinctive type of Resistive Switching Device (RSD). Once the device is activated, it maintains its state even after the applied field is reduced. This specialized device holds potential applications in Compact Disc-Recordable (CD-R), Digital Versatile Disc-Recordable (DVD-R), Blu-ray Disc Recordable (BD-R), and Write Once USB Drives.