Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4
W. X. Zhao, M. Yang, X. Du, Y. D. Li, K. Y. Zhai, Y. Q. Hu, J. F. Han,, Y. Huang, Z. K. Liu, Y. G. Yao, J. C. Zhuang, Y. Du, J. J. Zhou, Y. L. Chen,, and L. X. Yang

TL;DR
This study uses micro-ARPES to investigate the topological phase transition in Bi4I4, revealing a temperature-induced change from a weak topological insulator to a higher-order topological insulator with potential room-temperature applications.
Contribution
It provides the first spectroscopic evidence of a temperature-driven topological phase transition in quasi-1D Bi4I4, demonstrating tunable topological phases with detailed electronic structure analysis.
Findings
Bi4I4 exhibits a HOTI phase with an energy gap on the (100) surface at low temperature.
High-temperature Bi4I4 shows a WTI phase with gapless Dirac surface states.
Temperature induces a hysteresis in the surface gap, indicating a topological phase transition.
Abstract
The exploration of topological quantum materials and topological phase transitions is at the forefront of modern condensed matter physics. Quasi-one-dimensional (quasi-1D) bismuth iodide Bi4I4 exhibits versatile topological phases of matter including weak topological insulator (WTI) and higher-order topological insulator (HOTI) phases with high tunability in response to external parameters. In this work, performing laser-based angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we comprehensively investigate the fine electronic structure and topological phase transition of Bi4I4. Our examination of the low-temperature {\alpha}-phase reveals the presence of an energy gap on the (100) surface, providing spectroscopic evidence for the HOTI phase. Conversely, the high-temperature {\beta}-Bi4I4 harbors a gapless Dirac fermion on the (100) surface…
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Taxonomy
TopicsTopological Materials and Phenomena · Physics of Superconductivity and Magnetism · Advanced Condensed Matter Physics
