Monolithic beta-Ga2O3 Bidirectional MOSFET

TL;DR

This paper introduces a monolithic beta-Ga2O3 bidirectional MOSFET with dual gates, enabling efficient two-way conduction, high on/off ratio, and high breakdown voltage, suitable for power conversion applications.

Contribution

It presents the first monolithic beta-Ga2O3 bidirectional MOSFET with independent dual gates and multi-mode operation, demonstrating high performance and versatility.

Findings

High on/off current ratio of 1e7 in all modes

Breakdown voltage exceeds ±350 V

On-resistance approximately 500 ohm-mm

Abstract

We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (~-2.4 V for both gates) with a zero turn-on drain voltage and an on-resistance of approximately 500 ohm-mm. It exhibits a high on/off current ratio of 1e7 in all three conducting modes. In the blocking mode, the device breakdown was measured to be more than +-350 V with a current compliance of 0.5 mA/mm. The estimated breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6 MW/cm2 respectively.