Ultrabroadband thin-film lithium tantalate modulator for high-speed communications
Chengli Wang, Dengyang Fang, Alexander Kotz, Grigory Lihachev, Mikhail Churaev, Zihan Li, Adrian Schwarzenberger, Xin Ou, Christian Koos, Tobias Kippenberg

TL;DR
This paper introduces a high-speed, low-cost integrated modulator based on thin-film lithium tantalate, capable of supporting over 400 Gbit/s data rates, addressing the need for scalable, energy-efficient optical communication components.
Contribution
The work demonstrates a novel 110 GHz LiTaO3-based modulator supporting 176 GBd PAM8 transmission, leveraging existing commercial LiTaO3 technology for scalable manufacturing.
Findings
Supports 176 GBd PAM8 transmission
Achieves over 400 Gbit/s data rate
Uses silver electrodes to reduce microwave losses
Abstract
The continuous growth of global data traffic over the past three decades, along with advances in disaggregated computing architectures, presents significant challenges for optical transceivers in communication networks and high-performance computing systems. Specifically, there is a growing need to significantly increase data rates while reducing energy consumption and cost. High-performance optical modulators based on materials such as InP, thin-film lithium niobate (LiNbO3), or plasmonics have been developed, with LiNbO3 excelling in high-speed and low-voltage modulation. Nonetheless, the widespread industrial adoption of thin film LiNbO3 remains compounded by the rather high cost of the underlying 'on insulator' substrates -- in sharp contrast to silicon photonics, which can benefit from strong synergies with high-volume applications in conventional microelectronics. Here, we…
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Taxonomy
TopicsSemiconductor Lasers and Optical Devices · Photonic and Optical Devices · Radio Frequency Integrated Circuit Design
