alpha-Ta Films on c-plane Sapphire with Enhanced Microstructure

TL;DR

This paper introduces a novel synthesis method for high-quality alpha-Ta superconducting films on sapphire, achieving improved structural properties crucial for quantum computing applications.

Contribution

It presents a new growth technique enabling the deposition of single-phase, epitaxial alpha-Ta films with enhanced microstructure at high substrate temperatures.

Findings

Films are single-phase alpha-Ta with (110) orientation

Films have grains larger than 2 micrometers with specific in-plane orientations

Substrate-film interfaces are sharp with no intermixing

Abstract

Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We have therefore explored a new synthesis method for alpha-Ta films which allows the growth of these films with unprecedented quality. Using this method, high quality alpha-Ta films are deposited at a comparably high substrate temperature of 1150 C. They are single-phase alpha-Ta and have a single out-of-plane (110) orientation. They consist of grains above 2 um that have one of three possible in-plane orientations. As shown by scanning transmission electron microscopy and electron energy loss studies the substrate-film interfaces are sharp with no observable intermixing. The obtained insights into the epitaxial growth of body-centered-cubic films on quasi-hexagonal substrates lay the basis for harnessing the high structural coherence of such films in various applications.