Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications
Joshua E. Castro, Eber Nolasco-Martinez, Paolo Pintus, Zeyu Zhang,, Boqiang Shen, Theodore Morin, Lillian Thiel, Trevor J. Steiner, Nicholas, Lewis, Sahil D. Patel, John E. Bowers, David M. Weld, Galan Moody

TL;DR
This paper presents a heterogeneously integrated, tunable laser at 780 nm with narrow linewidth, large tuning range, and mode-hop-free operation, suitable for classical and quantum photonic applications on a chip.
Contribution
It demonstrates a novel integrated laser platform with wide, mode-hop-free tuning and narrow linewidth, advancing chip-scale photonic devices for diverse applications.
Findings
20 nm tuning range with <6 kHz linewidth
Mode-hop-free tuning over >100 GHz
Successful application in quantum and classical photonics
Abstract
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost. Here, we demonstrate an integrated continuously tunable laser in a heterogeneous gallium arsenide-on-silicon nitride (GaAs-on-SiN) platform that emits in the far-red radiation spectrum near 780 nm, with 20 nm tuning range, <6 kHz intrinsic linewidth, and a >40 dB side-mode suppression ratio. The GaAs optical gain regions are heterogeneously integrated with low-loss SiN waveguides. The narrow linewidth lasing is achieved with an extended cavity consisting of a resonator-based Vernier mirror and a phase shifter. Utilizing synchronous tuning of the integrated heaters, we show mode-hop-free wavelength tuning over a range larger than 100 GHz (200 pm). To…
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Taxonomy
TopicsPhotonic and Optical Devices · Advanced Fiber Laser Technologies · Semiconductor Lasers and Optical Devices
