Material transfer and contact optimization in MoS2 nanotube devices

TL;DR

This paper investigates transfer and contact optimization techniques for MoS2 nanotube devices, addressing fabrication challenges, contamination issues, and contact material selection to improve device performance.

Contribution

It analyzes transfer methods and compares contact materials specifically for MoS2 nanotube device fabrication, highlighting strategies to reduce contamination and Schottky barriers.

Findings

Transfer techniques impact device cleanliness and performance.

Choice of contact material influences Schottky barrier formation.

Optimized contact strategies enhance device functionality.

Abstract

While the promise of clean and defect-free $\textrm{MoS}_{2}$ nanotubes as quantum electronic devices is obvious, ranging from strong spin-orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of research, both with fundamental research and applications in mind. Contamination from transport agents as well as surface adsorbates and surface charges play a critical role for device performance. Many techniques have been proposed to address these topics for transition metal dichalcogenides in general. Here, we analyse their usage for the transfer based fabrication of $\textrm{MoS}_{2}$ nanotube devices. Further, we compare different contact materials in order to avoid the formation of a Schottky barrier.