Electrically pumped h-BN single-photon emission in van der Waals heterostructure

TL;DR

This paper demonstrates electrically pumped single-photon emission from atomic defects in h-BN using a van der Waals heterostructure, enabling efficient quantum light sources for quantum optoelectronics.

Contribution

It introduces a novel device design with atomic precision stacking that achieves robust electrical excitation of single-photon emitters in h-BN.

Findings

Successful electrical excitation of atomic defect emitters in h-BN

Photon energies between 1.4 and 2.9 eV indicating defect variety

Confirmation of defect crystallography through dipole axis analysis

Abstract

Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond and silicon carbide, which could lead to the circuit network of electrically triggered single-photon sources. However, a wide conduction channel which reduces the carrier injection per defect site has been a major obstacle. Here, we realize a device concept to construct electrically pumped single-photon emission using a van der Waals stacked structure with atomic plane precision. Defect-induced tunneling currents across graphene and NbSe2 electrodes sandwiching an atomically thin h-BN layer allow robust and persistent generation of non-classical light from h-BN. The collected emission photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation of a variety of atomic defects. By analyzing the dipole axis of observed emitters, we further confirm that emitters are crystallographic defect structures of h-BN crystal. Our work facilitates implementing efficient and miniaturized single-photon devices in van der Waals platforms toward applications in quantum optoelectronics.