Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

TL;DR

This study utilizes advanced scanning probe microscopy techniques to produce high-resolution 2D carrier profiles of 4H-SiC MOSFETs, revealing detailed charge distribution and structural features at the nanoscale.

Contribution

It demonstrates the effective application of SSRM and SCM methods for detailed 2D carrier profiling in 4H-SiC MOSFETs, achieving about 5 nm spatial resolution.

Findings

High spatial resolution (about 5 nm) maps of carrier profiles

Visualization of charge carrier fluctuations across MOSFET structures

Validation of AFM-based methods for semiconductor device analysis

Abstract

This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. The suitability of scanning probe methods based on atomic force microscopy (AFM) measurements is explored to investigate with high spatial resolution the elementary cell of 4H-SiC power MOSFETs. The two-dimensional (2D) cross-sectional maps demonstrated a high spatial resolution of about 5 nm using the SSRM capabilities. Furthermore, the SCM capabilities enabled visualizing the fluctuations of charge carrier concentration across the different parts of the MOSFETs elementary cell.