Hexagonal boron nitride based photonic quantum technologies

TL;DR

This review discusses the potential of hexagonal boron nitride as a platform for photonic quantum technologies, focusing on defect engineering, device fabrication, and recent progress in the field.

Contribution

It provides a comprehensive overview of the structure, defect creation, and device integration of hexagonal boron nitride for quantum photonics applications.

Findings

Advances in defect engineering of hBN for quantum emitters

Development of heterostructure devices for charge control

Progress in fabrication techniques for quantum photonic devices

Abstract

Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creation and assignment of colour centres in hexagonal boron nitride for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.