Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities

TL;DR

This paper demonstrates a significant enhancement in single-photon emission rate from InAs quantum dots by coupling them to broadband, metal-clad GaAs nanopillars, advancing scalable quantum photonic technologies.

Contribution

It introduces a broadband, Purcell-enhanced quantum dot-cavity system that boosts emission rates without requiring resonance tuning, simplifying fabrication for quantum emitters.

Findings

Achieved up to 38-fold increase in emission rate.

Demonstrated broadband Purcell enhancement over 15 nm.

Enabled GHz-level single-photon emission rates.

Abstract

On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 ({\lambda}/n)3 and low quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates.