Extension of a phase-field KKS model to predict the microstructure evolution in LPBF AlSi10Mg alloy submitted to non isothermal processes

TL;DR

This paper develops an extended phase-field KKS model combined with CALPHAD data to predict microstructure evolution in LPBF AlSi10Mg alloy during non-isothermal heat treatments, aiming to optimize post-processing.

Contribution

It introduces a novel extended KKS model that accounts for diffusion, elastic energy, and thermo-physical property evolution, validated against experimental DSC data.

Findings

Successfully reproduces microstructural changes observed experimentally.

Explains DSC heat flow peaks through microstructural evolution.

Provides insights into silicon precipitate growth and coalescence.

Abstract

The out-of-equilibrium heterogeneous microstructure typical of AlSi10Mg processed by Laser Powder Bed Fusion (LPBF) is often modified by further heat treatment to improve its ductility. According to literature, extensive experimental investigations are generally required in order to optimize these heat treatments. In the present work, a phase-field approach is developed based on an extended Kim-Kim-Suzuki (KKS) model to guide and accelerate the post-treatment optimization. Combined with CALculation of PHAse Diagrams (CALPHAD) data, this extended KKS model predicts microstructural changes under anisothermal conditions. To ensure a more physical approach, it takes into account the enhanced diffusion by quenched-in excess vacancies as well as the elastic energy due to matrix/precipitate lattice mismatch. As the developed model includes the computation of the evolution of the thermo-physical properties, its results are validated through comparison with experimental DSC curves measured during the non-isothermal loading of as-built LPBF AlSi10Mg. The computed microstructure evolution reproduces the microstructural observation and successfully explains the peaks in the DSC heat flow curve. It thus elucidates the detailed microstructural evolution inside the eutectic silicon phase by considering the growth and coalescence of silicon precipitates and the matrix desaturation.