Dynamical Control of Excitons in Atomically Thin Semiconductors
Eric L. Peterson, Trond I. Andersen, Giovanni Scuri, Andrew Y. Joe,, Andr\'es M. Mier Valdivia, Xiaoling Liu, Alexander A. Zibrov, Bumho Kim,, Takashi Taniguchi, Kenji Watanabe, James Hone, Valentin Walther, Hongkun, Park, Philip Kim, Mikhail D. Lukin

TL;DR
This paper demonstrates the dynamic electrical control of exciton properties in atomically thin TMD heterostructures, enabling real-time manipulation of emission wavelength and decay rates during exciton lifetime for advanced optoelectronic applications.
Contribution
It introduces a method for dynamical control of excitons in TMDs using electrical fields and patterned gates, a significant advancement over static control techniques.
Findings
Electric fields enable wavelength tuning of exciton emission.
Patterned gates allow rapid local doping and decay rate toggling.
Charge redistribution maps electronic transport in heterostructures.
Abstract
Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made towards characterizing and controlling excitons in TMDs, manipulating their properties during the course of their lifetime - a key requirement for many optoelectronic device and information processing modalities - remains an outstanding challenge. Here we combine long-lived interlayer excitons in angle-aligned MoSe/WSe heterostructures with fast electrical control to realize dynamical control schemes, in which exciton properties are not predetermined at the time of excitation but can be dynamically manipulated during their lifetime. Leveraging the out-of-plane exciton dipole moment, we use electric fields to demonstrate dynamical control over the…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Quantum optics and atomic interactions
