Dressing trapped ions with integrated wires

TL;DR

This paper explores using integrated wire-generated near fields to dynamically control and enhance trapped ion quantum operations, enabling custom Hamiltonians, artificial clock states, and laser-free gates.

Contribution

It introduces a versatile method for dressing trapped ions with integrated wires, providing new control techniques for quantum information processing.

Findings

Demonstrates creation of artificial clock states with reduced sensitivity

Shows breaking degeneracies for easier shelving at low fields

Enables laser-free single qubit gates on target ions

Abstract

We discuss dressing trapped ions with the near field of a trap integrated wire. Ramping a dressing field on/off adiabatically before/after an operation changes its effective Hamiltonian. The amplitude and detuning of the dressing field act as tunable degrees of freedom we can use to `customize' the properties of any operation. We propose three use cases for this general tool. First, we can generate `artificial' clock states, where we eliminate the (assumed to be small) linear sensitivity of a qubit. Second, we can break the degeneracies that often complicate shelving at low quantization fields\textemdash allowing us to implement operations with linearly polarized microwaves that would, otherwise, require circular polarization. Finally, we can implement laser-free single qubit gates on a set of `target' ions using fields that are separated from the rest of the computer in frequency space.