Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures

TL;DR

This paper demonstrates ferroelectric diodes based on van der Waals heterostructures with high electroresistance, stable multi-bit data retention, and potential for low-power neuromorphic computing applications.

Contribution

It introduces a novel vertical heterostructure of CIPS and graphene with high electroresistance and multi-bit memory capabilities for non-volatile memory devices.

Findings

Electroresistance ratio of ~10^6 achieved

On-state rectification ratio of ~2500

Stable multi-bit data retention at room temperature

Abstract

Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel non-volatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP2S6 (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10-nm-thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom electrodes, we achieve high electroresistance (on- and off-state resistance ratios) of ~10^6, on-state rectification ratios of ~2500 for read/write voltages of 2 V/0.5 V and maximum output current densities of 100 A/cm^2. These metrics compare favourably with state-of-the-art FeDs. Piezoresponse force microscopy measurements show that stabilization of intermediate net polarization states in CIPS leads to stable multi-bit data retention at room temperature. The combination of two-terminal design, multi-bit memory, and low-power operation in CIPS-based FeDs is potentially interesting for compute-in-memory and neuromorphic computing applications.