Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs

TL;DR

This paper introduces a multiparameter admittance spectroscopy method to analyze defects in MoS₂ thin-film MOSFETs, revealing electron traps and interface defects through detailed electrical measurements and modeling.

Contribution

It presents a novel multiparameter admittance spectroscopy approach for identifying and characterizing defects in MoS₂-based MOSFETs, combining experimental data with theoretical modeling.

Findings

Detection of electron traps in MoS₂ channels

Identification of interface defects at the gate insulator-MoS₂ interface

Correlation of experimental data with theoretical defect models

Abstract

A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model.